Nowadays several research directions are targeting the development of novel building blocks for information technology. The development of resistive switching memory devices (memristors) is among the most promising approaches. These devices are two terminal resistive units, whose resistance can be tuned by the driving voltage. Several material systems can perform resistive switching properties, one subgroup of these includes phase change memory devices (PCM), where the proper driving induces a reversible local phase transition in the active region, and this is reflected by the change of the device resistance. In the framework of the diploma thesis the applicant will develop PCM type resistive switching units and study their switching characteristics including the search for the various relevant physical time-scales governing the device operation. These experiments will also serve as a feedback for optimized device preparation. In the prescreening phase PCM type resistive switching thin films will be prepared, and the top contact will be established by the tip of a scanning tunneling microscope. Later, nanofabricated devices will be developed and studied.